SIRA20BDP-T1-GE3

Name: SIRA20BDP-T1-GE3
Brand: Vishay Siliconix

Analog & Power

MOSFET N-CH 25V 82A/335A PPAK

ActivePowerPAK® SO-8Analog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	0.58mOhm @ 20A, 10V
Base Product Number	SIRA20
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	9950 pF @ 15 V
Manufacturer	Vishay Siliconix
Mounting Type	Surface Mount
Product Status	Active
Series	TrenchFET® Gen IV
Technology	MOSFET (Metal Oxide)
Vgs (Max)	+16V, -12V
Vgs(th) (Max) @ Id	2.1V @ 250µA

Drain-to-Source Voltage	25 V
Current - Continuous Drain (Id) @ 25°C	82A (Ta), 335A (Tc)
Max Power Dissipation	6.3W (Ta), 104W (Tc)

Operating Temperature	-55°C~150°C(TJ)