SIR696DP-T1-GE3

Vishay Siliconix

SIR696DP-T1-GE3

Datasheet

Analog & Power

MOSFET N-CH 125V 60A PPAK SO-8

ActivePowerPAK® SO-8Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs11.5mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1410 pF @ 75 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesThunderFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 250µA

Electrical

Drain-to-Source Voltage125 V
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Max Power Dissipation104W (Tc)

Mechanical

Package / CasePowerPAK® SO-8
Supplier Device PackagePowerPAK® SO-8

Environmental

Operating Temperature-55°C ~ 150°C (TJ)