SIR692DP-T1-RE3

Vishay Siliconix

SIR692DP-T1-RE3

Datasheet

Analog & Power

MOSFET N-CH 250V 24.2A PPAK SO-8

ActivePowerPAK® SO-8Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs63mOhm @ 10A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs30 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds1405 pF @ 125 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesThunderFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage250 V
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Current - Continuous Drain (Id) @ 25°C24.2A (Tc)
Max Power Dissipation104W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CasePowerPAK® SO-8
Supplier Device PackagePowerPAK® SO-8

Environmental

Operating Temperature-55°C~150°C(TJ)