SIR681DP-T1-RE3

Name: SIR681DP-T1-RE3
Brand: Vishay Siliconix

Analog & Power

MOSFET P-CH 80V 17.6A/71.9A PPAK

ActivePowerPAK® SO-8Analog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	11.2mOhm @ 10A, 10V
Base Product Number	SIR681
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	4850 pF @ 40 V
Manufacturer	Vishay Siliconix
Mounting Type	Surface Mount
Product Status	Active
Series	TrenchFET® Gen IV
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.6V @ 250µA

Drain-to-Source Voltage	80 V
Current - Continuous Drain (Id) @ 25°C	17.6A (Ta), 71.9A (Tc)
Max Power Dissipation	6.25W (Ta), 104W (Tc)

Operating Temperature	-55°C~150°C(TJ)