SIR664DP-T1-GE3

Vishay Siliconix

SIR664DP-T1-GE3

Datasheet

Analog & Power

MOSFET N-CH 60V 60A PPAK SO-8

ActivePowerPAK® SO-8Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs6mOhm @ 20A, 10V
Base Product NumberSIR664
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1750 pF @ 30 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Current - Continuous Drain (Id) @ 25°C60A (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CasePowerPAK® SO-8
Supplier Device PackagePowerPAK® SO-8