SIR616DP-T1-GE3

Vishay Siliconix

SIR616DP-T1-GE3

Datasheet

Analog & Power

MOSFET N-CH 200V 20.2A PPAK SO-8

ActivePowerPAK® SO-8Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs50.5mOhm @ 10A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs28 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds1450 pF @ 100 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesThunderFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage200 V
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Current - Continuous Drain (Id) @ 25°C20.2A (Tc)
Max Power Dissipation52W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CasePowerPAK® SO-8
Supplier Device PackagePowerPAK® SO-8

Environmental

Operating Temperature-55°C ~ 150°C (TJ)