SIR108DP-T1-RE3

Vishay Siliconix

SIR108DP-T1-RE3

Datasheet

Analog & Power

MOSFET N-CH 100V 12.4A/45A PPAK

ActivePowerPAK® SO-8Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs13.5mOhm @ 10A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2060 pF @ 50 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesTrenchFET® Gen IV
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.6V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Current - Continuous Drain (Id) @ 25°C12.4A (Ta), 45A (Tc)
Max Power Dissipation5W (Ta), 65.7W (Tc)

Mechanical

Package / CasePowerPAK® SO-8
Supplier Device PackagePowerPAK® SO-8

Environmental

Operating Temperature-55°C ~ 150°C (TJ)