Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 10A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5920 pF @ 20 V |
| Manufacturer | Vishay Siliconix |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | TrenchFET® Gen IV |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | +20V, -16V |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Drain-to-Source Voltage | 45 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 36A (Ta), 113A (Tc) |
| Max Power Dissipation | 4.8W (Ta), 48W (Tc) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | PowerPAK® SO-8 |
| Supplier Device Package | PowerPAK® SO-8 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|