Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 1.27Ohm @ 2A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 622 pF @ 100 V |
| Manufacturer | Vishay Siliconix |
| Mounting Type | Through Hole |
| Packaging | Tube |
| Part Status | Active |
| Series | E |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-to-Source Voltage | 800 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
| Max Power Dissipation | 69W (Tc) |
| Package / Case | TO-251-3 Long Leads, IPak, TO-251AB |
|---|---|
| Supplier Device Package | IPAK (TO-251) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|