SIHS90N65E-E3

Vishay Siliconix

SIHS90N65E-E3

Datasheet

Analog & Power

MOSFET N-CH 650V 87A SUPER247

ObsoleteTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs29mOhm @ 45A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs591 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds11826 pF @ 100 V
ManufacturerVishay Siliconix
Mounting TypeThrough Hole
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C87A (Tc)
Max Power Dissipation625W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackageSUPER-247™ (TO-274AA)

Environmental

Operating Temperature-55°C~150°C(TJ)