SIHS36N50D-E3

Vishay Siliconix

SIHS36N50D-E3

Datasheet

Analog & Power

MOSFET N-CH 500V 36A SUPER-247

ObsoleteTO-274AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs130mOhm @ 18A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3233 pF @ 100 V
ManufacturerVishay Siliconix
Mounting TypeThrough Hole
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Max Power Dissipation446W (Tc)

Mechanical

PackageTube
Package / CaseTO-274AA
Supplier Device PackageSUPER-247™ (TO-274AA)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)