SIHP24N80AE-GE3

Vishay Siliconix

SIHP24N80AE-GE3

Datasheet

Analog & Power

MOSFET N-CH 800V 21A TO220AB

ActiveTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs184mOhm @ 10A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1836 pF @ 100 V
ManufacturerVishay Siliconix
Mounting TypeThrough Hole
PackagingTube
Part StatusActive
SeriesE
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage800 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Max Power Dissipation208W (Tc)

Mechanical

Package / CaseTO-220-3
Supplier Device PackageTO-220AB

Environmental

Operating Temperature-55°C ~ 150°C (TJ)