SIHP12N50C-E3

Vishay Siliconix

SIHP12N50C-E3

Datasheet

Analog & Power

MOSFET N-CH 500V 12A TO220AB

ActiveTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs555mOhm @ 4A, 10V
Base Product NumberSIHP12
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1375 pF @ 25 V
ManufacturerVishay Siliconix
Mounting TypeThrough Hole
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Max Power Dissipation208W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3

Environmental

Operating Temperature-55°C~150°C(TJ)