SIHK045N60EF-T1GE3

Vishay Siliconix

SIHK045N60EF-T1GE3

Datasheet

Analog & Power

E SERIES POWER MOSFET WITH FAST

Active8-PowerBSFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs52mOhm @ 17A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4685 pF @ 100 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesEF
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C47A (Tc)
Max Power Dissipation278W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerBSFN
Supplier Device PackagePowerPAK®10 x 12

Environmental

Operating Temperature-55°C~150°C(TJ)