SIHH20N50E-T1-GE3

Vishay Siliconix

SIHH20N50E-T1-GE3

Datasheet

Analog & Power

MOSFET N-CH 500V 22A PPAK 8 X 8

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs147mOhm @ 10A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2063 pF @ 100 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesE
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Max Power Dissipation174W (Tc)

Mechanical

PackageTube
Package / Case8-PowerTDFN
Supplier Device PackagePowerPAK® 8 x 8

Environmental

Operating Temperature-55°C~150°C(TJ)