SIHH11N65EF-T1-GE3

Name: SIHH11N65EF-T1-GE3
Brand: Vishay Siliconix

Analog & Power

MOSFET N-CH 650V 11A PPAK 8 X 8

Active8-PowerTDFNAnalog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	382mOhm @ 6A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1243 pF @ 100 V
Manufacturer	Vishay Siliconix
Mounting Type	Surface Mount
Packaging	Tape & Reel (TR) Cut Tape (CT)
Part Status	Active
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4V @ 250µA

Drain-to-Source Voltage	650 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Max Power Dissipation	130W (Tc)

Package / Case	8-PowerTDFN
Supplier Device Package	PowerPAK® 8 x 8

Operating Temperature	-55°C ~ 150°C (TJ)