SIHG47N65E-GE3

Vishay Siliconix

SIHG47N65E-GE3

Datasheet

Analog & Power

MOSFET N-CH 650V 47A TO247AC

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs72mOhm @ 24A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5682 pF @ 100 V
ManufacturerVishay Siliconix
Mounting TypeThrough Hole
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C47A (Tc)
Max Power Dissipation417W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247AC

Environmental

Operating Temperature-55°C~150°C(TJ)