SIHG026N60EF-GE3

Vishay Siliconix

SIHG026N60EF-GE3

Datasheet

Analog & Power

EF SERIES POWER MOSFET WITH FAST

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs26mOhm @ 38A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7926 pF @ 100 V
ManufacturerVishay Siliconix
Mounting TypeThrough Hole
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C95A (Tc)
Max Power Dissipation521W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247AC

Environmental

Operating Temperature-55°C ~ 150°C (TJ)