Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 130mOhm @ 4.1A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 100 V |
| Manufacturer | Vishay Siliconix |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Series | TrenchFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Drain-to-Source Voltage | 200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 18.3A (Tc) |
| Max Power Dissipation | 5.2W (Ta), 104W (Tc) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | 10-PolarPAK® (SH) |
| Supplier Device Package | 10-PolarPAK® (SH) |
| Operating Temperature | -55°C~150°C(TJ) |
|---|