SIDR622DP-T1-GE3

Vishay Siliconix

SIDR622DP-T1-GE3

Datasheet

Analog & Power

MOSFET N-CH 150V 64.6A PPAK

ActivePowerPAK® SO-8Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs17.7mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1516 pF @ 75 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 250µA

Electrical

Drain-to-Source Voltage150 V
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Current - Continuous Drain (Id) @ 25°C64.6A (Ta), 56.7A (Tc)
Max Power Dissipation6.25W (Ta), 125W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CasePowerPAK® SO-8
Supplier Device PackagePowerPAK® SO-8DC

Environmental

Operating Temperature-55°C ~ 150°C (TJ)