SIB800EDK-T1-GE3

Vishay Siliconix

SIB800EDK-T1-GE3

Datasheet

Analog & Power

MOSFET N-CH 20V 1.5A PPAK SC75-6

ObsoletePowerPAK® SC-75-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs225mOhm @ 1.6A, 4.5V
Base Product NumberSIB800
FET FeatureSchottky Diode (Isolated)
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs1.7 nC @ 4.5 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusObsolete
SeriesLITTLE FOOT®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±6V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C1.5A (Tc)
Max Power Dissipation1.1W (Ta), 3.1W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CasePowerPAK® SC-75-6
Supplier Device PackagePowerPAK® SC-75-6

Environmental

Operating Temperature-55°C~150°C(TJ)