SIB456DK-T1-GE3

Vishay Siliconix

SIB456DK-T1-GE3

Datasheet

Analog & Power

MOSFET N-CH 100V 6.3A PPAK SC75

ActivePowerPAK® SC-75-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs185mOhm @ 1.9A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds130 pF @ 50 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C6.3A (Tc)
Max Power Dissipation2.4W (Ta), 13W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CasePowerPAK® SC-75-6
Supplier Device PackagePowerPAK® SC-75-6

Environmental

Operating Temperature-55°C~150°C(TJ)