SIB4317EDK-T1-GE3

Vishay Siliconix

SIB4317EDK-T1-GE3

Datasheet

Analog & Power

P-CHANNEL 30-V (D-S) MOSFET POWE

ActivePowerPAK® SC-75-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs65mOhm @ 3A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds600 pF @ 15 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.3V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Current - Continuous Drain (Id) @ 25°C4.3A (Ta), 4.5A (Tc)
Max Power Dissipation1.95W (Ta), 10W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CasePowerPAK® SC-75-6
Supplier Device PackagePowerPAK® SC-75-6

Environmental

Operating Temperature-55°C ~ 150°C (TJ)