SIB419DK-T1-GE3

Vishay Siliconix

SIB419DK-T1-GE3

Datasheet

Analog & Power

MOSFET P-CH 12V 9A PPAK SC75-6

ObsoletePowerPAK® SC-75-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs60mOhm @ 5.2A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs11.82 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds562 pF @ 6 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusObsolete
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage12 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Max Power Dissipation2.45W (Ta), 13.1W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CasePowerPAK® SC-75-6
Supplier Device PackagePowerPAK® SC-75-6

Environmental

Operating Temperature-55°C~150°C(TJ)