SIB412DK-T1-E3

Vishay Siliconix

SIB412DK-T1-E3

Datasheet

Analog & Power

MOSFET N-CH 20V 9A PPAK SC75-6

ObsoletePowerPAK® SC-75-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs34mOhm @ 6.6A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10.16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds535 pF @ 10 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusObsolete
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Max Power Dissipation2.4W (Ta), 13W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CasePowerPAK® SC-75-6
Supplier Device PackagePowerPAK® SC-75-6

Environmental

Operating Temperature-55°C~150°C(TJ)