SIAA00DJ-T1-GE3

Name: SIAA00DJ-T1-GE3
Brand: Vishay Siliconix

Analog & Power

MOSFET N-CH 25V 20.1A/40A PPAK

ActivePowerPAK® SC-70-6Analog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	5.6mOhm @ 15A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1090 pF @ 12.5 V
Manufacturer	Vishay Siliconix
Mounting Type	Surface Mount
Packaging	Tape & Reel (TR) Cut Tape (CT)
Part Status	Active
Series	TrenchFET® Gen IV
Technology	MOSFET (Metal Oxide)
Vgs (Max)	+16V, -12V
Vgs(th) (Max) @ Id	2.5V @ 250µA

Drain-to-Source Voltage	25 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	20.1A (Ta), 40A (Tc)
Max Power Dissipation	3.5W (Ta), 19.2W (Tc)

Package / Case	PowerPAK® SC-70-6
Supplier Device Package	PowerPAK® SC-70-6

Operating Temperature	-55°C ~ 150°C (TJ)