SIA929DJ-T1-GE3

Vishay Siliconix

SIA929DJ-T1-GE3

Datasheet

Analog & Power

MOSFET 2P-CH 30V 4.5A SC70-6

ActivePowerPAK® SC-70-6 DualAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs64mOhm @ 3A, 10V
Base Product NumberSIA929
Configuration2 P-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds575pF @ 15V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.1V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Power - Max7.8W

Mechanical

Package / CasePowerPAK® SC-70-6 Dual
Supplier Device PackagePowerPAK® SC-70-6 Dual

Environmental

Operating Temperature-55°C ~ 150°C (TJ)