SIA850DJ-T1-GE3

Vishay Siliconix

SIA850DJ-T1-GE3

Datasheet

Analog & Power

MOSFET N-CH 190V 950MA PPAK

ObsoletePowerPAK® SC-70-6 DualAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3.8Ohm @ 360mA, 4.5V
FET FeatureSchottky Diode (Isolated)
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds90 pF @ 100 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusObsolete
SeriesLITTLE FOOT®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±16V
Vgs(th) (Max) @ Id1.4V @ 250µA

Electrical

Drain-to-Source Voltage190 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C950mA (Tc)
Max Power Dissipation1.9W (Ta), 7W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CasePowerPAK® SC-70-6 Dual
Supplier Device PackagePowerPAK® SC-70-6 Dual

Environmental

Operating Temperature-55°C~150°C(TJ)