SIA814DJ-T1-GE3

Vishay Siliconix

SIA814DJ-T1-GE3

Datasheet

Analog & Power

MOSFET N-CH 30V 4.5A PPAK SC70-6

ObsoletePowerPAK® SC-70-6 DualAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs61mOhm @ 3.3A, 10V
FET FeatureSchottky Diode (Isolated)
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds340 pF @ 10 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusObsolete
SeriesLITTLE FOOT®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Max Power Dissipation1.9W (Ta), 6.5W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CasePowerPAK® SC-70-6 Dual
Supplier Device PackagePowerPAK® SC-70-6 Dual

Environmental

Operating Temperature-55°C~150°C(TJ)