SIA485DJ-T1-GE3

Vishay Siliconix

SIA485DJ-T1-GE3

Datasheet

Analog & Power

MOSFET P-CH 150V 1.6A PPAK SC70

ActivePowerPAK® SC-70-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.6Ohm @ 500mA, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds155 pF @ 75 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 250µA

Electrical

Drain-to-Source Voltage150 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C1.6A (Tc)
Max Power Dissipation15.6W (Tc)

Mechanical

Package / CasePowerPAK® SC-70-6
Supplier Device PackagePowerPAK® SC-70-6

Environmental

Operating Temperature-55°C ~ 150°C (TJ)