SIA472EDJ-T1-GE3

Vishay Siliconix

SIA472EDJ-T1-GE3

Datasheet

Analog & Power

MOSFET N-CH 30V 12A PPAK SC70-6

ActivePowerPAK® SC-70-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs20mOhm @ 10.8A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1265 pF @ 15 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Max Power Dissipation19.2W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CasePowerPAK® SC-70-6
Supplier Device PackagePowerPAK® SC-70-6 Single

Environmental

Operating Temperature-55°C~150°C(TJ)