SIA427ADJ-T1-GE3

Vishay Siliconix

SIA427ADJ-T1-GE3

Datasheet

Analog & Power

MOSFET P-CH 8V 12A PPAK SC70-6

ActivePowerPAK® SC-70-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs16mOhm @ 8.2A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds2300 pF @ 4 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±5V
Vgs(th) (Max) @ Id800mV @ 250µA

Electrical

Drain-to-Source Voltage8 V
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Max Power Dissipation19W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CasePowerPAK® SC-70-6
Supplier Device PackagePowerPAK® SC-70-6

Environmental

Operating Temperature-55°C~150°C(TJ)