SIA4265EDJ-T1-GE3

Vishay Siliconix

SIA4265EDJ-T1-GE3

Datasheet

Analog & Power

P-CHANNEL 20-V (D-S) MOSFET POWE

ActivePowerPAK® SC-70-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs32mOhm @ 4A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs36 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds1180 pF @ 0 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C7.8A (Ta), 9A (Tc)
Max Power Dissipation2.9W (Ta), 15.6W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CasePowerPAK® SC-70-6
Supplier Device PackagePowerPAK® SC-70-6

Environmental

Operating Temperature-55°C ~ 150°C (TJ)