SIA425EDJ-T1-GE3

Vishay Siliconix

SIA425EDJ-T1-GE3

Datasheet

Analog & Power

MOSFET P-CH 20V 4.5A PPAK SC70-6

ObsoletePowerPAK® SC-70-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs60mOhm @ 4.2A, 4.5V
Base Product NumberSIA425
FET TypeP-Channel
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusObsolete
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Max Power Dissipation2.9W (Ta), 15.6W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CasePowerPAK® SC-70-6
Supplier Device PackagePowerPAK® SC-70-6

Environmental

Operating Temperature-55°C~150°C(TJ)