SIA112LDJ-T1-GE3

Vishay Siliconix

SIA112LDJ-T1-GE3

Datasheet

Analog & Power

N-CHANNEL 100-V (D-S) MOSFET POW

ActivePowerPAK® SC-70-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs14mOhm @ 10A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds355 pF @ 50 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C3.5A (Ta), 8.8A (Tc)
Max Power Dissipation2.9W (Ta), 15.6W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CasePowerPAK® SC-70-6
Supplier Device PackagePowerPAK® SC-70-6

Environmental

Operating Temperature-55°C ~ 150°C (TJ)