SI9933CDY-T1-GE3

Vishay Siliconix

SI9933CDY-T1-GE3

Datasheet

Analog & Power

MOSFET 2P-CH 20V 4A 8SOIC

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs58mOhm @ 4.8A, 4.5V
Base Product NumberSI9933
Configuration2 P-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds665pF @ 10V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.4V @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C4A
Power - Max3.1W

Mechanical

Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

Environmental

Operating Temperature-50°C ~ 150°C (TJ)