SI8900EDB-T2-E1

Vishay Siliconix

SI8900EDB-T2-E1

Datasheet

Analog & Power

MOSFET 2N-CH 20V 5.4A 10-MFP

Active10-UFBGA, CSPBGAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberSI8900
Configuration2 N-Channel (Dual) Common Drain
FET FeatureLogic Level Gate
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 1.1mA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C5.4A
Power - Max1W

Mechanical

PackageTape & Reel (TR)
Package / Case10-UFBGA, CSPBGA
Supplier Device Package10-Micro Foot™ CSP (2x5)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)