SI8819EDB-T2-E1

Vishay Siliconix

SI8819EDB-T2-E1

Datasheet

Analog & Power

MOSFET P-CH 12V 2.9A 4MICRO FOOT

Active4-XFBGAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs80mOhm @ 1.5A, 3.7V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds650 pF @ 6 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id900mV @ 250µA

Electrical

Drain-to-Source Voltage12 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 3.7V
Current - Continuous Drain (Id) @ 25°C2.9A (Ta)
Max Power Dissipation900mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case4-XFBGA
Supplier Device Package4-MICRO FOOT® (0.8x0.8)

Environmental

Operating Temperature-55°C~150°C(TJ)