SI8809EDB-T2-E1

Vishay Siliconix

SI8809EDB-T2-E1

Datasheet

Analog & Power

MOSFET P-CH 20V 1.9A MICROFOOT

Obsolete4-XFBGAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs90mOhm @ 1.5A, 4.5V
Base Product NumberSI8809
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs15 nC @ 8 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusObsolete
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id900mV @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C1.94 (Ta)
Max Power Dissipation500mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case4-XFBGA
Supplier Device Package4-Microfoot

Environmental

Operating Temperature-55°C~150°C(TJ)