SI8808DB-T2-E1

Vishay Siliconix

SI8808DB-T2-E1

Datasheet

Analog & Power

MOSFET N-CH 30V 4MICROFOOT

Active4-UFBGAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs95mOhm @ 1A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds330 pF @ 15 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id900mV @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C1.8A (Ta)
Max Power Dissipation500mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case4-UFBGA
Supplier Device Package4-Microfoot

Environmental

Operating Temperature-55°C~150°C(TJ)