SI8802DB-T2-E1

Vishay Siliconix

SI8802DB-T2-E1

Datasheet

Analog & Power

MOSFET N-CH 8V 4MICROFOOT

Active4-XFBGAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs54mOhm @ 1A, 4.5V
Base Product NumberSI8802
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs6.5 nC @ 4.5 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±5V
Vgs(th) (Max) @ Id700mV @ 250µA

Electrical

Drain-to-Source Voltage8 V
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Max Power Dissipation500mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case4-XFBGA
Supplier Device Package4-Microfoot

Environmental

Operating Temperature-55°C~150°C(TJ)