Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 23mOhm @ 2A, 4.5V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 10 V |
| Manufacturer | Vishay Siliconix |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | TrenchFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Drain-to-Source Voltage | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 5.9A (Ta) |
| Max Power Dissipation | 1.1W (Ta), 2.7W (Tc) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | 4-UFBGA, WLCSP |
| Supplier Device Package | 4-WLCSP (1.6x1.6) |
| Operating Temperature | -55°C~150°C(TJ) |
|---|