SI8416DB-T2-E1

Vishay Siliconix

SI8416DB-T2-E1

Datasheet

Analog & Power

MOSFET N-CH 8V 16A 6MICRO FOOT

Active6-UFBGAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs23mOhm @ 1.5A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1470 pF @ 4 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±5V
Vgs(th) (Max) @ Id800mV @ 250µA

Electrical

Drain-to-Source Voltage8 V
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Max Power Dissipation2.77W (Ta), 13W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case6-UFBGA
Supplier Device Package6-Micro Foot™ (1.5x1)

Environmental

Operating Temperature-55°C~150°C(TJ)