SI8407DB-T2-E1

Vishay Siliconix

SI8407DB-T2-E1

Analog & Power

MOSFET P-CH 20V 5.8A 6MICRO FOOT

Obsolete6-MICRO FOOT®CSPAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs27mOhm @ 1A, 4.5V
Base Product NumberSI8407
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs50 nC @ 4.5 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusObsolete
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id900mV @ 350µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C5.8A (Ta)
Max Power Dissipation1.47W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case6-MICRO FOOT®CSP
Supplier Device Package6-Micro Foot™ (2.4x2)

Environmental

Operating Temperature-55°C~150°C(TJ)