SI8405DB-T1-E3

Vishay Siliconix

SI8405DB-T1-E3

Datasheet

Analog & Power

MOSFET P-CH 12V 3.6A 4MICROFOOT

Obsolete4-XFBGA, CSPBGAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs55mOhm @ 1A, 4.5V
Base Product NumberSI8405
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs21 nC @ 4.5 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusObsolete
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id950mV @ 250µA

Electrical

Drain-to-Source Voltage12 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C3.6A (Ta)
Max Power Dissipation1.47W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case4-XFBGA, CSPBGA
Supplier Device Package4-Microfoot

Environmental

Operating Temperature-55°C~150°C(TJ)