SI7972DP-T1-GE3

Vishay Siliconix

SI7972DP-T1-GE3

Datasheet

Analog & Power

MOSFET 2N-CH 60V 8A PPAK SO8

ActivePowerPAK® SO-8 DualAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs18mOhm @ 11A, 10V
Base Product NumberSI7972
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1050pF @ 30V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.7V @ 250µA

Electrical

Drain-to-Source Voltage60V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Power - Max22W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

Environmental

Operating Temperature-55°C ~ 150°C (TJ)