SI7949DP-T1-GE3

Vishay Siliconix

SI7949DP-T1-GE3

Datasheet

Analog & Power

MOSFET 2P-CH 60V 3.2A PPAK SO8

ActivePowerPAK® SO-8 DualAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs64mOhm @ 5A, 10V
Base Product NumberSI7949
Configuration2 P-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs40nC @ 10V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage60V
Current - Continuous Drain (Id) @ 25°C3.2A
Power - Max1.5W

Mechanical

Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

Environmental

Operating Temperature-55°C ~ 150°C (TJ)