SI7862ADP-T1-E3

Vishay Siliconix

SI7862ADP-T1-E3

Datasheet

Analog & Power

MOSFET N-CH 16V 18A PPAK SO-8

ActivePowerPAK® SO-8Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3mOhm @ 29A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs80 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds7340 pF @ 8 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage16 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C18A (Ta)
Max Power Dissipation1.9W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CasePowerPAK® SO-8
Supplier Device PackagePowerPAK® SO-8

Environmental

Operating Temperature-55°C~150°C(TJ)