SI7846DP-T1-E3

Vishay Siliconix

SI7846DP-T1-E3

Datasheet

Analog & Power

MOSFET N-CH 150V 4A PPAK SO-8

ActivePowerPAK® SO-8Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs50mOhm @ 5A, 10V
Base Product NumberSI7846
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs36 nC @ 10 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 250µA

Electrical

Drain-to-Source Voltage150 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Max Power Dissipation1.9W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CasePowerPAK® SO-8
Supplier Device PackagePowerPAK® SO-8

Environmental

Operating Temperature-55°C~150°C(TJ)