SI7810DN-T1-E3

Vishay Siliconix

SI7810DN-T1-E3

Datasheet

Analog & Power

MOSFET N-CH 100V 3.4A PPAK1212-8

ActivePowerPAK® 1212-8Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs62mOhm @ 5.4A, 10V
Base Product NumberSI7810
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C3.4A (Ta)
Max Power Dissipation1.5W (Ta)

Mechanical

Package / CasePowerPAK® 1212-8
Supplier Device PackagePowerPAK® 1212-8

Environmental

Operating Temperature-55°C ~ 150°C (TJ)